Wolfspeed Technologies of Durham, NC provides silicon carbide (SiC) materials and power devices such as Schottky diodes and MOSFETs as well as radio frequency (RF)… Read More »Silicon Carbide Silicon Carbide Chips For Electric Vehicles

Silicon Carbide (SiC) is one of the hardest materials, boasting high corrosion resistance. It is commonly used to produce mechanical seals and pump parts. SiC… Read More »Silicon Carbide Ceramic

Defects divert current through unexpected channels, decreasing efficiency and heightening the risk of early device failure. Advanced epitaxial growth methods such as chlorine-based chemical vapor… Read More »Advantages of Silicon Carbide (SiC) Semiconductor Materials

Diamond silicon carbide is not only hard, but it offers exceptional chemical resistance as well. Furthermore, its thermal expansion coefficient and conductivity rates are low… Read More »Diamond Silicon Carbide

Silicon carbide transistors have quickly gained ground in power electronics applications that demand higher voltage semiconductor devices, due to several key properties that allow them… Read More »Advantages of Silicon Carbide Transistors in Power Electronics Applications

Silicon carbide is an inorganic chemical compound of pure silicon and pure carbon that can be doped with nitrogen or phosphorus to form an n-type… Read More »Silicon Carbide and Renewable Energy

Carborundum is an artificial stone used in making jewelry items and for sharpening blades as well as concrete surfaces. With a beautiful color and sparkling… Read More »Black Carborundum

Integrating SiC power devices into electric vehicles (EVs) increases their efficiency and performance while decreasing costs, leading to extended driving range, alleviated range anxiety concerns… Read More »SiC Power Semiconductor for EVs

Silicon carbide (SiC) is an extremely hard chemical compound produced as powder and crystal for use in industrial furnaces. However, natural instances of SiC also… Read More »Types of Silicon Carbide Heating Elements

Catania SiC Campus is the first integrated fab to mass produce 150mm SiC epitaxial substrates using all steps of production flow; 200-mm wafers will follow… Read More »STMicroelectronics Catania SiC Campus in Italy