Silicon Carbide is an excellent semiconductor material suitable for a range of applications. With high breakdown electric fields and low ON resistance, this material makes for excellent power electronics applications and switches at rates almost 10 times faster than silicon.
Silicon carbide wafers also boast a low coefficient of thermal expansion, meaning they can withstand extreme heat and pressure without deforming their shape.
High bandgap
Silicon carbide’s wide bandgap makes it an excellent material choice for power devices that operate at higher temperatures and voltages, including devices requiring higher ON resistance and thermal conductivity than that offered by silicon. Furthermore, silicon carbide switches ten times faster than its silicon counterpart to improve efficiency and reduce switching losses – meaning more performance from smaller wafers.
The bandgap of any material measures the difference in energy between its individual atomic layers. It determines how easily electrons pass between layers; Silicon has a narrow bandgap which makes electron transfer between layers more challenging, as well as more dense gaps that limit how much energy a device can transmit.
Wide-bandgap semiconductors have quickly gained in popularity for use in power applications due to their superior performance characteristics. Able to withstand higher voltages and temperatures than silicon, wide bandgap semiconductors help conserve space within circuit designs while making circuits more efficient – ultimately helping decrease size, weight and increasing electric vehicle driving ranges.
Silicon carbide is an extremely hard and brittle material with great potential. Found only in trace amounts as moissanite jewels naturally, most silicon carbide used in electronics applications is synthesized synthetically through a complex process requiring high-purity SiC raw materials.
High thermal conductivity
Silicon carbide substrates boast high thermal conductivities that enable heat to flow easily, which reduces device temperatures and enhances performance. This feature is particularly beneficial in devices requiring high amounts of power and voltage such as high-voltage transistors; its reduced operating temperature also extends their lifespan and prolongs their lifespan.
This high-performance material is extremely robust and resistant to various temperatures. Due to its chemical purity and resistance against high temperature degradation, this material finds widespread application as wafer tray supports and paddles in semiconductor furnaces as well as electrical devices like thermistors and varistors. Furthermore, its ability to withstand higher voltage levels makes it a superior option than regular silicon for applications requiring high voltage devices.
SiC substrates are made by cutting large SiC crystals known as boules into thin circular wafers using a diamond wire saw. After being cut, these wafers are polished until their surfaces have a uniform texture; after which, SiC is highly resistant to thermal shock and does not react with acids, bases, or salt solutions at temperatures exceeding 800degC.
SiC (silicon carbide) is a wide bandgap semiconductor material found naturally as the rare mineral moissanite and mass produced since 1893 for industrial uses, such as bulletproof vest ceramic plates. Due to its low thermal expansion and hardness properties, SiC is also utilized in optical mirrors used by astronomical telescopes.
Low ON-resistance
Silicon carbide is an exceptionally durable material capable of withstanding high electric fields and capable of switching at 10 times the rate of silicon, enabling smaller control circuitry with reduced energy losses – properties which make silicon carbide an excellent substrate for power devices.
Silicon carbide semiconductor production requires starting with high-grade raw material. PVT (powdered vacuum tumbling), an innovative technique used for sublimating SiC powder under high temperature and pressure in vacuum chambers, produces large single crystals which can then be cut into thin wafers for use as semiconductor substrates.
Slicing is performed using a diamond wire saw, while wafers are polished to achieve a flat surface. As this material requires special processing equipment that may take multiple attempts before it works perfectly, substrates produced this way are very costly and have long lead times.
Silicon carbide substrates offer more corrosion-resistance than their polysilicon counterparts, making them suitable for applications in harsh environments. Furthermore, their low ON resistance enables them to withstand higher voltages than other materials and make for more efficient inverters for electric vehicles with increased driving range and lighter battery management systems.
High temperature resistance
Silicon carbide, also known as carborundum, is an inorganic chemical compound composed of silicon and carbon that occurs naturally as the gemstone moissanite and has been mass produced as powder and crystal since 1893 for use as an abrasive and in non-electronic applications such as car brakes and ceramic plates in bulletproof vests. As it can tolerate high temperatures, high voltages and abrasion it makes an ideal material for power devices.
One such industry where SiC-based MOSFETs excel is in electric vehicle applications, where their high voltage demands can be met effortlessly by these MOSFETs – leading to greater energy conservation, reduced battery management systems size reduction and extended driving distances.
Silicon carbide not only boasts thermal and electrical properties, but it is also notable for its chemical resistance – meaning it can endure harsh operating environments with no warping or cracking issues. Furthermore, silicon carbide’s low coefficient of thermal expansion ensures rapid temperature changes are handled without warping or cracking occurring in its structure.
Physical properties of silicon carbide substrates wafers are of critical importance as they directly affect epitaxial layer quality, as well as device performance. Their surface state plays an integral part in chip reliability and performance; selecting suppliers with quality manufacturing processes are paramount for optimal chip reliability and performance. CVD silicon carbide theoretically dense and intrinsically pure substrates come in various sizes from 2″-3″, as well as thickness tolerance of up to 1 microinch from reliable companies.
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