Qorvo’s E1B half and full bridge modules boast industry leading static (RDSON, Coss, Rthjc), dynamic (Eon, Eoff) and high power cycling performance that exceeds that of SiC MOSFETs.
Qorvo offers high-performance silicon carbide FET, JFET and diode power semiconductors for electric vehicle battery applications as well as IT infrastructure and renewable energy, offering industry leading efficiency and reliability.
Cascode (SiC FET) Technology
Qorvo’s SiC FET power devices utilize an innovative circuit arrangement called cascode. This configuration combines an SiC junction field-effect transistor (JFET) with a silicon MOSFET to create a device with efficiency benefits from wide bandgap switch technology without compromising reliability and usability.
JFETs do not exhibit this same channel resistance and thus have significantly lower on-resistance per unit area, providing greater efficiency overall. In comparison, general planar SiC MOSFETs account for more than 40% of total RDS(ON). By comparison, channel resistance comprises more than 60% of their overall on-resistance, which varies greatly with device voltage (more than 40% for 1200V devices).
Due to their lower on-resistance, our SiC FET devices feature significantly lower RDS(ON) and better switching figures-of-merit than conventional Si IGBTs even at high temperatures, with increased design flexibility as these devices can be driven with standard gate drivers.
UnitedSiC Gen 4 SiC FETs offer designers an RDS(ON) value of 9m at 25degC, enabling them to minimize conduction losses and enhance efficiency across EV powertrain applications. Their low intrinsic capacitance makes this possible, making them suitable for 400V bus voltage systems.
Fast Switching
New semiconductor switch technologies can have dramatic ramifications on power conversion efficiency when they’re implemented. Wide band-gap technologies such as silicon carbide (SiC) and gallium nitride (GaN) have demonstrated notable performance, size and cost improvements compared to traditional silicon devices.
SiC FETs’ inherent fast switching capabilities can be fully realized with the help of an RC snubber to manage voltage overshoot and ringing caused by fast dv/dt. This effectively lowers turn-off switching losses dramatically making a SiC E1B module exceptionally attractive in ZVS soft-switching applications such as Phase Shifted Full Bridge (PSFB), LLC etc.
Qorvo’s SiC FET cascode technology integrates the benefits of both Si and GaN HEMT devices into one device, offering industry-leading specific on resistance (RDS(on)) with industry-standard specific on resistance (RDS(on) in a TO-Leadless (TOLL) package that is 30% smaller in volume and half the height compared with traditional TO-247 or D2PAK packages – for instance their UHB100SC12E1BC3N half bridge SiC FET with TOLL package offers about 35mOhm at 25C junction temperature respectively!
This price point is significantly less than other best-in-class TOLL packaged 750V, 100A SiC MOSFETs available today from other vendors.
High Efficiency
Qorvo’s SiC FETs boast low RDS(on), dramatically reducing switching losses and increasing frequency, which allows designers to reduce external components while still maintaining system efficiency for greater power density in smaller packages at lower system costs.
Snubbers are integral components of ZVS soft switching applications that reduce turn-off switching losses further, making them indispensable in applications like electric vehicle motor drives requiring low switch-off losses over extended lifespans.
Qorvo offers standalone Schottky diodes as snubbers that come in D2PAK-3L, D2PAK-7L and TO-247 3-lead packages, providing various R DS(on) values – 23, 30 and 70 milliohm – that provide zero reverse recovery charges with maximum junction temperature rated of 175degC.
Qorvo’s UF4C/SC series of 1200V silicon carbide (SiC) hybrid Field Effect Transistors integrate an SiC JFET and high-efficiency Si MOSFET into one package to deliver outstanding thermal performance and reliability for use on 800V bus architectures such as electric motor drives, industrial battery chargers, uninterruptible power supplies and DC-DC solar inverters.
Low Conduction Losses
FET on-resistance is directly proportional to its power loss during conduction. A decrease in this value means smaller devices for given RDS(ON) ratings – something which can have significant benefits when applied in high efficiency power conversion applications.
Qorvo SiC MOSFETs provide an improved balance between switching energy and conduction losses than competing technologies due to increased cell density and substrate-thinning techniques. As a result, significantly smaller package sizes for a given RDS(ON), as well as lower time-related output capacitance/stored energy (COSS), which reduces losses in SS topologies like LLC are possible.
Utilising a pure capacitive device snubber further reduces turn-on losses and improves efficiency in ZVS soft-switching applications such as PSFB and LLC. As can be seen in Figure 8 below, these snubbers significantly reduced turn-on losses by 53% at 100A; their losses scale with capacitance, so choosing wisely to avoid increasing hard switch-on losses.
Low Thermal Resistance
Qorvo’s new 750V SiC FET, part UJ4SC075005L8S, boasts an industry-best figure of merit (RDS(On)/Area), with ultra-low on resistance in an extremely small TOLL footprint. Rated at up to 588A up to 144degC and boasting RDS(On) 2.5 times greater than Gen 4 silicon MOSFETs, the device provides exceptional surge current performance for demanding protection applications like solid state relays and circuit breakers.
Soft switching applications like PSFB and LLC require low on-resistance to minimize turn-off losses, which increase power density. When used with a capacitive snubber, UnitedSiC devices have proven 6.6 times more effective in terms of decreasing turn-off losses and junction temperature (Tj) than comparable silicon MOSFETs.
The device’s superior performance is made possible through a special cascode circuit configuration that minimizes switching loss and gate drive complexity while simultaneously achieving high efficiency, especially for ZVS applications. Furthermore, its robustness is increased through wide operating temperature range as well as being able to withstand high instantaneous junction temperatures without degradation or parametric drift.
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