Silicon carbide, more commonly referred to as Carborundum, is an industrial ceramic material first widely produced in 1891 and widely used today as an abrasive and steel additive. Additionally, synthetic moissanite gems may also be created from this hard ceramic material.
onsemi stands out among its competition by providing supply assurance faster than other players through its vertically integrated SiC supply chain.
High Power Density
Onsemi silicon carbide (SiC) devices offer higher power densities, enabling more current to flow more efficiently in smaller spaces, increasing efficiency and performance in power converters – especially important when used for high-speed applications like DC to AC conversion in electric vehicle traction inverters.
SiC power semiconductors can help EV traction inverters achieve lower parasitic losses, improved thermal management and increased reliability. When compared with traditional HEMTs, SiC offers significantly reduced turn-on and conduction losses which in turn reduce size and weight while increasing output power density of their modules for increased output power density from their inverter output power density.
Increased power density enables more effective DC to AC conversion, leading to reduced power losses and greater energy efficiency. Furthermore, smaller, lighter and more reliable traction inverters allow for extended range electric vehicle.
SiC devices reduce switching losses, helping lower system temperature and extend traction inverters’ lifespans – this is particularly significant in battery-powered EVs where traction inverters are one of the highest voltage power components in use.
Onsemi’s EliteSiC M3e MOSFETs combine SiC gate driver technology with superior energy efficiency for use in traction inverter applications. These devices can reduce turn-on losses by 50% while conduction losses can be decreased up to 40%, providing significant increases in power efficiency.
Low Temperature
Silicon Carbide (SiC) is an industrial compound composed of silicon and carbon. It’s hard, durable and boasts an extremely high melting point of 4,150degC; sintered into ceramic forms for applications such as automotive brakes or clutches, bulletproof vest plates or bulletproof vest plates can all use SiC sintered pieces as they’re sintered out to form ceramic products such as automotive brakes/clutches/ceramic plates for bulletproof vests etc. Additionally SiC crystals can even make moissanite gemstones!
Material with an unusually low thermal expansion coefficient and stability makes this material an excellent choice for use in mirrors on astronomical telescopes, as it can withstand high temperatures without deforming or warping. Furthermore, its rigidity and weight make it an attractive choice when designing large mirrors. Inert at elevated temperatures also makes this material attractive for space applications such as satellites.
As electric vehicle and renewable energy systems proliferate, demand for devices capable of efficiently converting power between forms will skyrocket. Companies producing intelligent power solutions are increasingly including SiC devices from Onsemi in their products to meet this growing demand and deliver an end-to-end solution with increased performance while reduced package size. Onsemi’s investment at its Bucheon fab will further support its strategic growth plan and secure their leadership in intelligent power technology.
Low Power Loss
As global electrification and transition toward sustainable energy increase, one of the greatest challenges lies in minimizing power conversion losses. to address this need, Onsemi has introduced EliteSiC silicon carbide MOSFETs and IGBT-based high density power integrated modules which offer improved performance metrics over traditional technologies resulting in lower system costs, increased efficiencies, and an increase in power density.
EliteSiC’s portfolio of power converters delivers more compact and efficient power conversion for battery chargers, motor drives, traction inverters, power supplies and DC-DC converters – as well as new applications such as fast charging stations for electric vehicles (EV), utility-scale energy storage systems (ESS) and solar inverters.
Onsemi’s EliteSiC devices are widely utilized by industry and automotive applications due to their wide selection of voltages, packages and configurations for industrial and automotive use. Their comprehensive portfolio of intelligent power solutions includes gate drivers, diodes, fuses and controllers that help improve reliability while decreasing overall system costs.
Onsemi purchased US-based GT Advanced Technologies in 2021 to accelerate development of their SiC device portfolio and gain access to in-house wafer supply. They plan on investing in an expansion project at their Czech Republic site over several years in order to meet growing demand for high-efficiency power semiconductors – this will also create a robust European supply chain aligned with initiatives like Chips Act and Made in Europe policies.
High Efficiency
EliteSiC aims to revolutionize power electronics by offering superior efficiency in traction inverters that convert direct current from batteries into alternating current for use by motor(s). onsemi’s device platform can cut conversion losses and cooling requirements by 50 percent.
Onsemi recently completed construction of a state-of-the-art, world’s-largest 200 mm SiC fab that is now operational in Bucheon, South Korea and will eventually produce over one million wafers annually. Furthermore, as part of this expansion onsemi plans on hiring 1000 local employees over three years in highly qualified technical roles that will bring economic benefits back to Bucheon and South Korea as a whole.
As electric vehicles (EVs) become more widespread across global automotive markets, demand for silicon carbide (SiC) semiconductor devices is on an unprecedented upward trend. TrendForce projects that EV power devices will experience compound annual compound annual growth of 38% up until 2026. SiC’s high power density, low switching losses and decreased parasitic effects allow designers to simplify power topologies by using smaller passive components for reduced overall system costs. Onsemi offers world-class SiC devices with superior BVdss and RDS(on) characteristics, which enable higher switching frequencies without increasing system costs or using smaller heatsinks, as well as providing best-of-class integrated modules. In addition to its SiC fab, global supply chains covering volume boule growth, substrate epitaxy device fabrication and device fabrication as well as best-in-class integrated modules have also been established for onsemi’s SiC supply chains.
English 
Swedish