Performance Silicon Carbide Plate was specifically crafted to withstand the demands of ICP etch processes, guaranteeing superior results. It boasts exceptional thermal conductivity, mechanical strength and chemical resistance for maximum performance.
Silicon carbide boasts an exceptional Mohs hardness rating and resists corrosion from acids, making it an excellent material choice for use in demanding environments as lining plates, support parts, and wear resistant applications.
XXL Plate Size
SiC plates have been developed to withstand both high temperatures and voltages, offering outstanding performance across various applications. Their durability and heat resistance enable them to efficiently transfer power while also increasing efficiency of electronics like diodes and transistors.
Silicon carbide plates have long been valued for their hardness, thermal stability, strength and resistance to wear and corrosion – qualities which make them indispensable in military gear, protective armor and semiconductor substrate applications. Used together with materials such as boron carbide and Kevlar to provide ballistic protection from various threats.
This high-performing material is well-suited to LED industry’s Inductively Coupled Plasma (ICP) etching process as its ability to withstand extreme temperature fluctuations allows it to deliver exceptional outcomes. Furthermore, its thermal shock tolerance provides increased efficiency. Furthermore, its low thermal expansion rates prevent corrosion caused by acids.
Reduced Kiln Furniture
Kiln furniture is often an unheralded component of Low Temperature Co-fired Ceramics (LTCC) sintering processes, providing even heat distribution across its chamber while supporting layers. Furthermore, it must withstand harsh sintering environments without experiencing thermal shock.
Saint-Gobain’s lightweight silicon carbide kiln furniture reduces overall refractory mass in a chamber, enabling faster heating and cooling cycles for increased productivity. Unlike heavy-mass cordierite-based products, these shelves and support posts feature superior mechanical strength which can withstand repeated exposure to high temperatures without degrading, leading to shorter sintering cycle times, saving energy, time, money and production costs.
Increased Productivity
Silicon carbide plates are extremely hard and heat-resistant. Their strength remains even at temperatures up to 1400degC while boasting great thermal conductivity and electrical semi-conductivity properties.
These materials offer superior corrosion resistance in harsh chemical environments and abrasion conditions, making them the ideal choice for components that must operate under extreme conditions, such as power electronics and LED lighting systems.
Silicon carbide plates can help improve energy efficiency in numerous sectors. Their faster switching speeds and reduced conduction losses help minimize energy waste within electronic devices, so more electricity can be produced with reduced power usage.
As they offer high breakdown voltage and can withstand high temperature operations, these materials make the perfect materials for power electronic devices such as inverters and chargers for electric vehicles. Their wide energy band gaps can support more than twice as much current than gallium arsenide devices while their low coefficient of thermal expansion helps minimize dimension changes at higher temperatures while keeping structural integrity intact.
Increased Efficiency
With photolithography systems for mass producing computer chips becoming ever more sophisticated, CeramTec’s Rocar SiF plates help ensure the quality of silicon wafers produced. Conceived to support electrostatic wafer chucks (also referred to as wafer chucks) used in semiconductor machinery, these SiSiC plates feature superior stiffness, flatness and wear-resistance for increased wear resistance, thermal shock tolerance and corrosion protection.
Wide band gap semiconductors such as silicon carbide are an ideal choice for power electronics due to their excellent characteristics; however, their efficiency depends heavily on the quality of ohmic contacts [45].
At the core of all metal-silicon ohmic contacts is an extremely high critical electric field that must be achieved through proper surface treatment and electrical conductivity, especially at elevated temperatures. To meet this need, various metallization processes like SLID or Ag paste sintering technologies must also be employed as well as three zone JTE processes with increasing acceptor concentration from inner to outer regions.
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