Silicon carbide epi wafers are at the core of power electronics devices that deliver higher power density with reduced energy usage, revolutionizing many sectors such as electric vehicles, renewable energy sources and industrial automation.
Optic modelling offers high repeatability and thickness maps, making it the preferred method for epitaxial layer measurements. Furthermore, optical modelling is unaffected by tilt or strain effects.
High electrical conductivity
Silicon carbide is a revolutionary material in power electronics. From electric vehicles to data centers, silicon carbide could revolutionise green power components thanks to its superior electrical conductivity which allows more current to flow at lower temperatures.
Quality SiC epi wafers are integral to the success of devices made on them, which is why we dedicate so much energy and time in our production process to deliver substrates with low defect density and tightened resistivity distribution for today’s advanced SiC power device designs.
Epitaxial layers are measured using Fourier-transform infrared (FTIR) reflectometry and secondary ion mass spectrometry (SIMS), which provide measurements of oxygen, nitrogen, and boron concentration profiles on both epi-wafer surfaces and substrate faces. Nondestructive optical modeling also offers accurate estimates for epitaxial thickness in samples with two layers within sub- and several hundred micron range.
High thermal conductivity
Silicon Carbide (SiC) wafers feature high thermal conductivity that enables power semiconductors to absorb and dissipate heat more efficiently, leading to greater device performance at lower manufacturing costs and decreased manufacturing losses. Furthermore, SiC wafers’ reduced power loss allows devices to operate at higher voltages without damaging or producing excessive heat – an advantage over silicon semiconductors which require constant power loss for operation at higher voltages.
SiC wafers boast ten times greater breakdown electric field strength and three times larger band gaps compared to traditional silicon, making them a cutting-edge semiconductor technology, poised to disrupt various industries.
Quality SiC epitaxial wafers are essential in the production of advanced power semiconductor devices like Schottky diodes, metal-oxide semiconductor field-effect transistors (MOSFETs), junction field-effect transistors (JFETs) and bipolar junction transistors (BJTs). These devices are widely used in applications including electric vehicle (EV) traction inverters and onboard chargers, solar inverters/wind turbine converters/other renewable energy systems; high quality SiC wafers have optimal crystalline orientation/surface roughness/defect density for optimal device performance ensuring maximum device performance for optimal device performance.
High density
SK Siltron’s CSS 100mm and 150mm Prime Grade portfolios of SiC wafers offer superior mechanical characteristics to ensure compatibility with both existing and emerging device fabrication processes. Their low bow/warpage ratio and stringent defect tolerance make them suitable for more demanding power electronic components like pin diodes or switches, and the PE2O8 system delivers top-grade wafers equipped with superior handling technologies and hot wall reactor for consistent heat control – while their small reactor design boosts throughput while decreasing running costs.
Low defect density allows customers to create high yield power devices from epitaxial wafers with ease, which enables faster and more efficient power device operation at higher voltages as well as smaller system devices and reduced power losses – key features driving increased demand for SiC wafers in high voltage power applications.
High temperature resistance
SiC epi wafers offer higher thermal stability than their silicon counterparts, making them suitable for renewable energy applications and industrial automation systems. Furthermore, their lower defect density allows manufacturers to make more complex devices.
Epitaxial wafers are made from single crystal silicon carbide that has been cut and polished into thin wafers. To ensure high quality epitaxial wafers, precise control of thickness, doping (carrier concentration), and defect density is necessary. At SK Siltron CSS’s 100 mm and 150 mm Prime Grade epi products offer these critical characteristics that provide compatibility with current and emerging device fabrication processes.
SiC epi wafer quality is of utmost importance in power semiconductor technology. Atomic Force Microscope (AFM) images of epi-wafer surface defects show that when optimized with process parameters for C/Si ratio of 0.95 and carrier gas flow rate of 130 slm, roughness levels on epi wafers can be reduced below 1%.
High temperature stability
Silicon Carbide (SiC) epi wafers’ high temperature stability is key to their use in power electronic devices, enabling manufacturers to create more reliable and energy-efficient devices at higher voltages. SiC also makes an excellent material choice for renewable energy applications as it can improve efficiency while decreasing energy waste from solar or wind power systems.
At the core of SiC wafer quality lies precise control during their growth process. Each layer should match your desired device performance in terms of size, thickness, doping concentration and defect density – this requires using advanced technologies like ion implantation and oxidation for this task.
SiC’s ability to withstand elevated temperatures and currents is driving breakthrough innovation in power electronics technology. SiC is revolutionizing electric vehicle powertrains by offering greater power density at smaller form factors; additionally it’s driving progress in renewable energy as well as industrial automation systems.
High thermal stability
SiC epi wafers boast the ability to withstand high temperatures and operate in harsh environments, making them perfect for power semiconductor devices. Their features enable new applications in diverse sectors including automotive, renewable energy and industrial automation.
SiC epi wafers boast not only superior thermal stability, but also low intrinsic defect densities for increased device yield and reliability. Furthermore, their uniform thickness and doping concentration enable manufacturers to design power devices with lower on-state resistances and higher blocking voltages.
SiC epitaxial wafers are essential in the creation of power semiconductor devices such as Schottky diodes and metal oxide semiconductor field effect transistors (MOSFETs). These devices feature excellent electrical conductivity and the ability to withstand high voltages without incurring excessive switching losses; additionally they can support high currents with minimal switching losses. Wafers are manufactured through a batch process in which one crystal is cut into disc-shaped wafers before being polished before final trimming takes place.
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