650v sic mosfets are helping to improve efficiency and power density across an array of applications, from server and telecom SMPSs, uninterruptible power supplies (UPSs), motor drives and EV charging stations to UPSs and uninterruptible power supplies (UPSs).
CoolSiC MOSFETs with 650 V are distinguished by high reliability and the lowest switching and conduction losses across various topologies, including bidirectional OBC topologies. This helps lower system cost, weight and size while increasing power density to meet stringent efficiency standards.
High Efficiency
650V SiC MOSFETs provide increased efficiency and power density than silicon (Si) MOSFETs in high-speed switching applications due to lower on-state resistances, switching losses, Miller capacitance levels, less parasitic turn-on effects, making them suitable for power systems as well as electric vehicle (EV) charging stations.
Infineon has expanded their CoolSiCTM portfolio with the launch of an extensive lineup of 650 V devices. This includes both trench and surface mount options designed to deliver maximum power conversion performance in power conversion scenarios such as server and telecom switched-mode power supplies, uninterruptible power supplies, photovoltaic inverters, energy storage systems and electric car on-board chargers.
These new 650 V SiC MOSFETs combine innovative active cell design with advanced thin wafer technology for best in class figure of merit Rsp(Rdson*area) at 650 V breakdown voltage. Their Rdson (12 mOhm) resistance makes them market leaders, and these packages come standard on D2PAK7L and To247 chips.
These devices are optimized to maximize performance in automotive and industrial applications by optimizing energy loss figure of merits, with surge, avalanche capability and short circuit robustness to help designers eliminate external gate resistors while cutting system costs; additionally providing more efficient operation and lower heat output.
Low On-Resistance
Sic MOSFETs differ from Si MOSFETs by not needing derating in order to maintain high voltage ratings, meaning they can be designed with slightly higher voltage breakdown voltage without losing their required gate-source current (VDS) margin – leading to decreased system power losses and greater efficiency.
Additionally, the non-inversion channel region of 650V SiC MOSFETs features significantly lower resistance than that found in conventional Si MOSFETs and decreases with increasing temperature – helping reduce static and dynamic losses, switching losses, as well as turn-on switching loss for more energy-efficient power designs.
As their efficiency allows designers to reduce AC/DC power converter sizes without compromising performance, 650V SiC MOSFETs make an excellent choice for on-board chargers of electric vehicles (OBC) as well as energy-saving applications in data centers, servers, UPS units and renewable energy storage systems. Their superior energy efficiency also contributes to lower system costs as manufacturers strive to meet stricter environmental and energy-efficiency standards.
Wolfspeed’s 3rd Generation 650 V SiC MOSFET technology is well-suited to meeting the challenging requirements of industrial, server/telecom and EV charging applications. Boasting superior short-circuit performance and on-resistance, these SiC MOSFETs can significantly boost energy system efficiencies. Furthermore, using CoolSiC Trench Technology, these SiC devices feature low Miller capacitance values while simultaneously offering reduced turn-on voltage and enhanced system reliability.
Low Switching Losses
Lower switching losses of 650V SiC MOSFETs allow smaller and lighter systems, leading to enhanced performance, increased power density and energy efficiency compared to conventional silicon technology.
As shown by a comparison between on-resistance vs. rated voltage in a sample of state-of-the-art 650V SiC MOSFETs manufactured today and their more established silicon counterparts, such as two IGBTs competing against them, these results prove that SiC MOSFETs have reached maturity levels comparable to silicon IGBTs while providing even greater benefits when operating at higher voltages, such as 1200V or beyond.
Wolfspeed’s 3rd Generation 650V SiC MOSFETs boast the lowest on-state resistances and switching losses of any device in their class, making them suitable for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage; as well as uninterruptible power supplies.
Onsemi offers several 650V SiC MOSFET options, such as their EliteSiCTM devices, which provide superior switching performance compared to super junction MOSFETs in terms of cost, EMI emissions, high temperature operation and switching loss per area – critical metrics when optimizing PFC and LLC stage efficiency for hyperscale data centers. Furthermore, these devices help lower total system costs by reducing component count and simplifying thermal design; you can access them through Direct Sales, Distributors or Online Retailers.
High Reliability
The global 650V SiC MOSFET market is driven primarily by the increased demand for artificial intelligence (AI) data centers, leading to rising energy demands of power supplies – pushing efficiency, density and robustness levels higher still. A 650V SiC MOSFET provides ideal solutions in this demanding application because of its excellent levels of reliability, efficiency and power density.
The 650v sic MOSFET allows designers to implement advanced topologies with higher efficiency and robustness, such as Totem-pole PFC converters that require repeated hard commutation operations or high temperature environments, such as Totem pole PFC or CLLC resonant converters with CLLC resonant converters that feature CLLC resonant converters requiring repeated hard commutation operations or high temperature environments, at lower RDS(ON) capacitances, Miller effect than silicon MOSFETs; superior body diode reverse recovery charge charge recovery capability and Avalanche ruggedness make these modules perfect.
Infineon’s CoolSiC power 650 V silicon carbide MOSFETs deliver exceptional reliability and robustness in an industry-standard TOLL package, featuring thermally enhanced die attach and bonding process, with low on resistance, positive temperature coefficient and maximum efficiency at real operating temperatures. These devices feature industry standard footprint dimensions as well as the industry-standard TOLL package size.
650V SiC MOSFETs come in single and dual channel versions for easy integration into existing power conversion designs. Furthermore, their wide temperature and operating condition support makes them suitable for numerous applications while their low parasitic turn-on effects help increase efficiency and reliability.
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