Silicon carbide (SiC) is an analogous wide bandgap semiconductor to diamond, offering similar electrical properties allowing higher switching frequencies, lower power losses and larger power densities.
onsemi’s 1200 V EliteSiC planar SiC MOSFET is now sampling in an industry-standard TO-247-4L package and boasts reduced conduction and turn-off losses compared to earlier generations, providing 11mO resistance resistance.
Small Size
Onsemi power semiconductors provide designers with a diverse selection of package footprint and voltage-rating options, and their silicon carbide (SiC) technology provides faster switching speeds with reduced conduction losses than traditional silicon power switches.
Power management circuits for electric vehicle (EV) traction inverters, off-board chargers and DC-DC converters typically rely on SiC MOSFETs and diodes for optimal performance. The 1200 V EliteSiC planar SiC MOSFET reduces conduction and turn-off losses by 30% with low on resistance of 11mO, leading to higher efficiency, faster operating frequencies, greater output power and decreased EMI emissions.
The TBL045N065SC1 comes in a TOLL package and meets Pb, Halogen and BFR standards with moisture sensitivity level 1 (MSL 1) to make it suitable for demanding applications like solar inverters, server and telecom power supplies, uninterruptible power supplies (UPS) and energy storage. As Onsemi is one of the only vertically integrated SiC power semiconductor suppliers with in-house boule growth, substrate fabrication, epitaxy and device fabrication processes; onsemi can quickly deliver additional offerings quickly; onsemi’s latest device offers 60% smaller packaging compared to its silicon predecessor in helping customers meet ErP and 80 PLUS Titanium efficiency standards.
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Silicon carbide (SiC) semiconductors can help improve system efficiency and lower costs, particularly for high-power applications like charging electric vehicles (EV), industrial drives and power supplies, data centers, or onboard charging for electric vehicles (EV). Even small improvements in system efficiency can have dramatic results: for instance, improving an EV inverter by just one percentage point could enable 4 billion miles to be driven annually more, while improving it for data centers could save $650 million annually on electricity costs alone!
With its 1200 V blocking voltage, SiC MOSFETs are capable of providing higher current in smaller footprints while managing heat more effectively than traditional silicon power transistors. Their drain-source on-resistance (RDS(on)) of less than 1mO allows it to deliver higher current with reduced noise emissions while their soft recovery body diode minimizes reverse recovery current for reduced reverse-recovery current minimization as well as reverse recovery current minimization and reverse-recovery current reduction, minimising reverse recovery current ringing noise minimization while their insulated gate structure prevents charge discharging into their bodies for reduced switching losses and noise emissions.
In hard switching applications, the 1200 V EliteSiC MOSFET can cut power loss by 20% compared to industry leading competitors, enabling designers to operate at higher switching frequencies while using smaller passive components and lowering system cost overall. Furthermore, its fast switching performance and low conduction losses make this device ideal for high-speed applications.
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As the SiC power MOSFET continues its rapid rise in applications, early adopters often express concerns over its reliability. Studies indicate that SiC is extremely rugged but it still requires rigorous tests under severe conditions in order to assess how it performs under current, EMI, temperature fluctuations and more. These assessments allow designers to make better circuit designs that maximize performance and save costs.
Engineers at Infineon have successfully reduced the failure rate of SiC devices by screening them with high voltages. This screening process involves applying successive voltages one V higher than before; their threshold voltages are then measured and their ratio to recommended gate use voltage on data sheets is used to calculate failure rate reduction factors.
Reliability issues associated with packaged SiC MOSFETs under power cycling stress also remain. While not as extreme, degradation from charge trapping at the SiC/SiO2 interface causes substantial shifts in threshold voltage and forward current that reduce device lifetime.
Onsemi recently unveiled a 650 V SiC power MOSFET with TOLL packaging that meets all these criteria and more! Specifically designed to meet the rigorous demands of switch-mode power supplies, server and telecom power supplies, solar inverters and uninterruptible power supplies; it is also free from halogens (halogen-free, Pb-free and RoHS compliant).
Low On-Resistance
SiC MOSFETs feature lower on-resistance than silicon (Si) devices, enabling smaller packages and energy savings. Their faster switching times lead to improved efficiency and lower power loss – as well as lower temperature coefficients which make them more reliable than Si power semiconductors.
On-resistance is an integral element in short circuit withstand time for high current applications, particularly SiC devices with long on-resistances and when connected directly to drain and source voltage sources. A sic device with too much on-resistance will extend the amount of time it takes for its gate drive voltage to reach saturation and set off an avalanche effect, potentially leading to breakdown in its silicon (Si) oxide layer separating drain and source.
One way to reduce on-resistance is to make gate driver ICs more robust, helping prevent damage to devices. UnitedSiC has produced SiC FETs with industry’s lowest on-resistance. Their 4th Generation UJ4SC075006K4S device for instance features 6mOhm on-resistance and can support 750V voltage rating with integrated de-sat function that integrates seamlessly with standard drivers.
Toshiba has developed a device structure which drastically lowers on-resistance by decreasing JFET resistance and spreading resistance, with RonA reduced by 43% and Ron*Qgd by 80% compared to their second-generation products, as well as adding a wider p-diffusion region to reduce feedback capacitance and JFET resistance.
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