Onsemi’s newly introduced 1700 V EliteSiC silicon-carbide (SiC) devices introduced at CES 2023 provide higher breakdown voltage (BV), necessary for high-power industrial applications like electric vehicle charging stations and renewable energy grid equipment. Their M1 planar EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes deliver efficient performance for these industrial drives.
High Breakdown Voltage (BV)
At CES 2023 in Las Vegas, Phoenix-based power semiconductor IC supplier onsemi unveiled three additions to their EliteSiC family of silicon carbide (SiC) devices: the 1700 V MOSFET and two 1700 V avalanche-rated Schottky diodes offer higher breakdown voltage solutions needed for high power industrial electronics used in electric vehicle charging stations, industrial drives, solar inverters and other forms of renewable energy equipment.
SiC power MOSFETs and IGBTs used in these applications outshone conventional silicon counterparts by being capable of handling much higher voltage levels without experiencing excessive on-state resistance and other parasitic effects that limit performance. SiC is more robust than silicon, enabling it to safely sustain thousands of volts while dissipating less heat while discharging less heat into the environment than traditional silicon devices.
The EliteSiC MOSFET NTH4L028N170M1 features a continuous drain current of 57 A with low common-source inductance of only 28 milliohm, low EON/EOFF losses to ensure fast switching, reliable negative gate voltage drives and no spikes that could damage conventional MOSFETs. Designed for energy infrastructure and industrial drive applications, its gate source resistance (RDS(ON)) of only 28 milliohm ensures fast switching times. Ideal for energy infrastructure/industry drive applications as its reliability works reliably with negative gate voltage drives while turning off spikes that could damage conventional MOSFETs.
Low Drain-Source Resistance (RDS(ON))
The drain-source on-state resistance (RDS(ON)) of a MOSFET measures its effective resistance when fully activated. A lower RDS(ON), in turn, decreases power dissipation and enhances system efficiency. You can measure this value using either a curve tracer or oscilloscope equipped with two Keithley 2400 SourceMeter SMUs from Keithley (please refer to application note for measurement instructions).
RDS(ON) of power MOSFETs depends on several variables, such as gate-to-source voltage (VGS), channel length and width, device geometry, doping concentration concentration, temperature fluctuations, as well as gate-to-source voltage (VGS). Therefore it is crucial that when selecting semiconductors for any switch application they meet all necessary specifications.
Onsemi’s NTH4L028N170M1 silicon carbide MOSFET provides low RDS(ON) and high breakdown voltage (BV), making it suitable for energy infrastructure and industrial drive applications. It boasts continuous drain current of 57 A and drain-source resistance of 40 milliohms at VGS of 4.3 V. Additionally, this device utilizes trench technology which offers reduced EON/EOFF losses while operating reliably with positive gate drives up to 25 V. Additionally, trench technology enables it to offer lower RDS(ON), making this MOSFET more cost efficient than silicon oxide (SiO2).
Low EON and EOFF Losses
Onsemi offers the nth4l028n170m1, an advanced SiC MOSFET that has been specifically tailored for renewable energy applications. Featuring reliable negative gate drive operation with low turn on energy and EON losses as well as fast switching times, it provides top performance in renewable grid equipment such as battery storage systems or solar/wind inverters.
Onsemi offers this device from its EliteSiC family and pairs it with Schottky diodes capable of withstanding 1700 V avalanche conditions (NDSH25170A and NDSH10170A) to offer higher breakdown voltage and reduce energy losses in high-power industrial applications. X-ON Electronics’ NTH4L028N170M1 device provides an cost-effective solution for high-voltage SiC power solutions in the USA, Europe, India and Australia. Ideal for energy infrastructure and industrial drives that need stable operation at elevated temperatures. The NTH4L028N170M1’s higher breakdown voltage makes it ideal for these applications, while its low EON and EOFF losses make it suitable for high-power conversion circuits. Furthermore, this device boasts a continuous drain current of 57 A, with low RDS(ON) of 28mohm for reduced resistance during switching operations as well as reduced common-source inductance for ultimate convenience.
Fast Switching
At CES 2023, Onsemi unveiled their latest line of silicon carbide (SiC) devices, such as their 1700V M1 planar EliteSiC MOSFETs optimized for fast switching applications. These MOSFETs offer higher breakdown voltages (BVs) necessary for high-voltage power electronics used in electric vehicle charging stations, industrial drives, solar inverters and other renewable energy equipment; their use at elevated temperatures without degradation allows for smaller and lighter industrial power supplies.
TO-247-4LD packages for these devices ensure low common source inductance and feature RDS(ON) of 28mO as well as low EON and EOFF losses, providing reliable operation with both positive and negative gate drive modes; turn on spikes are suppressed when devices are turned off.
X-On Electronics is proud to be an authorized distributor of On Semiconductor’s NTH4L028N170M1 SiC MOSFETs, providing high-quality yet cost-effective products for customers worldwide. Reach out today and learn more about these and other electronics components!
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