Electronic hardware for tactical, mobile, airborne and deployed assets needs to focus on increasing efficiency while simultaneously decreasing size and cost. Large diameter SiC wafers play an essential role in accomplishing this objective.
Leading device makers are ramping up internal wafer production. STMicroelectronics operates two 150mm SiC hubs in Catania and Ang Mo Kio (Singapore), as well as one 200 mm hub with Sanan Optoelectronics in China.
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Silicon Carbide (SiC) power semiconductors have revolutionized high-power applications by switching electricity even more efficiently and enabling smaller designs, helping improve EV efficiency, quick charging stations, railroads, renewable energy systems, AI data centers and AI datacenters among many others.
SiC devices boast lower system costs, higher operating temperatures, reduced size and weight and lower power losses than their silicon counterparts. Furthermore, this technology enables higher breakdown voltages that handle more energy with reduced loss, as well as higher frequencies at which it operates.
Cold Split technology will also be employed at this fab, which helps minimize defects on substrates and increase yield through cleaner production processes and reliability. In its first phase, it will create 900 high-value jobs while its expansion will include a 200mm line for SiC power semiconductors and gallium nitride (GaN) epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy Epitaxy is in its entirety: its first phase will create 900 high-value jobs with better yield resulting in greater reliability of yield in production processes with improved yield. Furthermore, Cold Split technology used to reduce substrate defects will ensure cleaner, more reliable manufacturing process with higher yield. Its expansion includes 200 millimeter line dedicated solely for SiC power semiconductor production as well as Gallium Nitride epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy epitaxy.
X-FAB’s 6-inch SiC process capabilities offer customers a platform for high efficiency power semiconductors, such as MOSFETs and JFETs, operating more efficiently than their silicon counterparts at significantly higher voltages, while offering lower transistor on resistance, reduced transmission losses, extended high temperature operation with increased thermal conductivity, reduced parasitic capacitance capacitance reductions, smaller footprints, lower weight and higher power density for automotive, rail, renewable energy and industrial applications.
High Stability
SiC is notable for its wide bandgap, which allows devices to operate at higher voltages, temperatures and frequencies than traditionally available for silicon technology – this results in significant efficiency gains in applications where devices must function under more severe environmental conditions than would impede its functionality.
SiC’s high stability stems from its strong covalent bonds that form an extremely rigid crystal lattice structure, creating a very resilient material resistant to high temperatures and humidity levels – ideal for harsh environments like automotive and aerospace use.
SiC devices must have an efficient means of dissipating heat; otherwise, their high power density could result in overheating and premature device failure. Aluminum nitride materials provide effective heat dissipation with their thermal conductivity properties that ensure heat is dispersed effectively.
As the market for SiC devices expands, more companies are turning their attention towards producing them – including existing IDM fabs that may have the capacity to switch over from producing other types of semiconductors to producing SiC products.
Success in this field hinges upon finding an affordable supply of SiC substrates. While SiC can be more costly than silicon, acquiring raw materials may prove challenging for some vendors. One solution could be partnering with a supplier who owns their own SiC fab – this provides tight coupling between design and process that enables companies to optimize production right under one roof.
Reliability
SiC devices remain under development in terms of long-term reliability. Although many device structures have been shown, their reliability in harsh conditions remains relatively untested; for example, one MOSFET only had its gate oxide survive 1000 s under 6 MV/cm electric fields; with advances in processing technology and better understanding of SiC’s intrinsic characteristics expected to lead to improvements over time.
SiC’s high thermal conductivity also allows dissipated heat to be quickly extracted from devices, leading to larger power supply for any given temperature, increasing efficiency and decreasing operating costs.
SiC devices have long been recognized for their excellent quality; however, scaling them remains challenging due to high capital equipment costs associated with building a 200mm wafer fab capable of producing these devices at lower production volumes.
Wolfspeed stands alone as the only vertically integrated SiC manufacturer, from cultivating boules to packaging die. As the only vertically integrated producer with over 30 years’ worth of history with this material – including producing the world’s first SiC MOSFET in 1987 and today boasting an entirely dedicated facility for quality, reliability and safety – Wolfspeed stands ready to address these concerns. Their commitment is evidenced in over 6 trillion field hours served, extensive wear-out studies performed over many years as well as low FIT rates that ensure reliability is provided for today and tomorrow’s industrial and automotive applications.
Lower Costs
Silicon carbide (SiC) chips have become an invaluable asset to industries reliant on high-voltage systems, including electric vehicles (EVs), renewable energy sources, fast charging infrastructures and military and aerospace applications that cannot afford outages. SiC provides significantly lower electric current leakage than conventional silicon semiconductors for power electronics applications resulting in significant operational efficiency gains.
SiC chips require significantly less electricity to manufacture than their silicon counterparts, making this truly green technology. Furthermore, system efficiency gains from using SiC devices over their lifespans more than offset any initial energy investment required in growing and processing initial SiC material.
SiC devices cost much less to produce than silicon counterparts, which helps drive adoption and facilitate product differentiation. While still facing several obstacles in production, low production costs have helped spur its acceptance by manufacturers.
Wolfspeed recently unveiled an internal capacity expansion to meet demand, such as its 300mm line. Other IDMs are teaming up with foundries to help tap this market; an example being STMicroelectronics’ new SiC campus in Catania.
Microchip’s Colorado Springs plant is making investments to expand to a 200 mm line; however, the company will only make this switch when it makes economic sense; therefore 150 mm wafers may remain standard for some time allowing manufacturers to keep costs low for their customers.
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