Silicon carbide is revolutionizing power design by offering greater efficiency and power density in applications ranging from electric vehicles, solar inverters and industrial-grade switch-mode power supplies. Infineon provides premium products which deliver substantial cost savings across systems thanks to its extensive expertise with SiC MOSFETs and silicon IGBTs.
Kulim 3 Fabric in Malaysia has secured customer prepayments to secure capacity reservations and create supply chain stability, thus helping prevent production crises in the future.
CoolSiC G2 MOSFET trench technology
Infineon’s CoolSiC G2 MOSFET trench technology represents a revolutionary development in power systems and energy conversion, revolutionising key performance figures like stored energies and charges by up to 20% compared to its predecessor without compromising quality or reliability levels. This translates to increased energy efficiency, reduced cost per watt costs, and contributed towards decarbonisation efforts.
CoolSiC G2 combines the advantages of silicon carbide with industry-leading reliability to deliver industry-leading reliability. It boasts excellent avalanche test results, can operate under high temperatures and voltage conditions, has a wide operating temperature range and robustly protects against parasitic effects; additionally its high gate drive current enables faster switching speeds for increased overall power density.
The device features an impressively low RDS(on), which helps reduce power loss for improved energy efficiency. Furthermore, its switching behavior in response to thermal load ensures optimal peak efficiency at all temperatures.
The Infineon 3.3kV XHP 2 CoolSiC G2 portfolio enables smaller form factors for DC fast charging stations for electric vehicles, motor drives, photovoltaics and energy storage installations. Furthermore, its superior cycling capabilities extend lifetimes, which lead to lower cost per watt. Infineon developed their.XT package interconnect technology as an antidote for SiC’s higher Young’s modulus that causes thermomechanical stress on solder joints resulting from thermomechanical stress from thermomechanical stress on solder joints due to thermomechanical stress on thermomechanical stress caused by thermomechanical stress on solder joints; using diffusion soldering this technology provides extremely robust die attach and increased cycle life over conventional power semiconductor packaging technologies.
.XT packaging technology
Silicon carbide (SiC) is an industrially viable semiconductor material, doped with nitrogen or phosphorus for n-type production and oxygen or gallium for p-type. Fused or bonded with other materials to form chips such as power semiconductors. When compared with silicon, SiC exhibits superior performance at higher temperature conditions while having lower voltage drop, current draw and switching loss, with larger cycling capability overall.
Infineon’s CoolSiC G2 MOSFET trench technology, found within their 1200 V CoolSiC ICE-based HybridPACK Drive G2 Fusion system, provides increased MOSFET key performance indicators like stored energy and charge capacity compared to what has previously been achievable with SiC MOSFETs. This leads to greater overall system efficiency and reliability compared with their predecessors.
M1H technology also enables a much wider gate voltage window, providing increased resilience against driver and layout-induced voltage spikes at the gate. Furthermore, low switching and transmission losses reduce cooling requirements substantially.
As well as their usual advantages, Infineon’s new modules boast best-in-class cycling capability with up to 25 times greater load cycles than standard joining technology – making them suitable for demanding applications such as rail technology, photovoltaics, DC EV charging infrastructure and industrial power supplies. They come in an easy to assemble D2PAK SMD 7-pin package for enhanced thermal conductivity and assembly control.
Automotive-graded CoolSiC MOSFETs
CoolSiC MOSFETs are AEC-Q101 compliant to ensure safety, reliability and durability in demanding automotive applications. Packaged as DFN5060s for optimal heat dissipation, they prevent overheating in demanding conditions while their high creepage distance of 5.89mm meets 800V system requirements while simultaneously reducing coating effort. They’re halogen-free and RoHS compliant too – perfect!
These new devices deliver higher power density and efficiency to industrial drives and electric vehicle charging systems, with lower conduction and switching losses compared to silicon IGBTs, enabling higher switching frequencies while simultaneously lowering overall system costs. They also boast extended temperature ranges so they can operate in harsh environments.
These devices feature robust body diodes rated for hard commutation, making them suitable for power factor correction circuits and bi-directional topologies. Their availability enables a range of configurations – DC-AC inverters, PFC circuits and even buck/boost converters!
Infineon is harnessing its comprehensive expertise in SiC MOSFET and silicon IGBT technologies, power module packaging, gate drivers, and sensors to develop premium products with cost savings at the system level. As proof of its holistic approach is seen through Infineon’s investment in Kulim 3; the world’s largest 200mm SiC power fab. This will enable Infineon to continue meeting growing demand for its wide bandgap technologies and power system solutions.
Cold Split technology
At SEMICON West tradeshow in San Francisco, wafering technology company SILTECTRA GmbH of Dresden, Germany revealed new cost-of-ownership (CoO) advantages for their COLD SPLIT laser-thinning process – benefits designed to benefit manufacturers of power semiconductors.
This technology uses sawing-like sawing techniques to split crystalline materials with minimal loss, producing over twice as many wafers from each boule than traditional sawing technology does and significantly lowering operating costs. Furthermore, this method can handle various substrates like silicon carbide (SiC), gallium nitride (GaN), and sapphire.
Thin wafer technology may also lower costs while improving electrical performance of end user devices, including SiC-based Schottky diodes used for on-board chargers and DC/DC converters for electric vehicles. Thinned wafers have lower resistance which decreases electrical losses.
Infineon’s 200-millimeter SiC power semiconductor fabrication facility in Kulim, Malaysia will become the largest and most competitive in the world. Dedicated to meeting global decarbonization efforts’ increased demand for power semiconductors, its opening coincides with an Infineon hub located near Villach Austria that allows rapid expansion and seamless scale-up; all features that ensure consistent quality and delivery to customers.
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