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Silicon Carbide (SiC), also referred to as Carborundum, is an inorganic chemical compound consisting of silicon and carbon atoms that forms naturally as moissanite gemstone.… Läs mer om "Transparent Silicon Carbide

Silicon carbide ceramics are among the hardest and most durable available, featuring resistance to high temperatures, abrasion, corrosion and other harsh environments. Silicon carbide makes… Läs mer om "Sintered Silicon Carbide – Ideal for Military and Law Enforcement Applications

SCT055HU65G3AG is an advanced silicon carbide (SiC) MOSFET that provides faster switching, lowers losses, and improves thermal management in electrical equipment for electric vehicles and… Läs mer om "650 V SCT055HU65G3AG MOSFET For EV Fast Chargers

Silicon Carbide (SiC) MOSFETs can handle more current than their silicon IGBT counterparts and are therefore ideal for applications involving high switching frequencies. Furthermore, SiC… Läs mer om "Advantages of Silicon Carbide MOSFETs

Nickel silicon carbide is an exceptional material with incredible properties, such as its four times higher hardness compared to both nitrided steel and diamonds. Composite… Läs mer om "Nickel Silicon Carbide

SiC etching is an integral component of power devices and microsystems fabrication. Achieve a high etch rate without degrading surface quality can be challenging due… Läs mer om "How to Control SiC Etching

Silicon Carbide (SiC) boasts superior electrical and mechanical properties, making it a go-to material for applications including high-power switches and aerospace electronics. Furthermore, its wide… Läs mer om "4H Silicon Carbide

US semiconductor giant Texas Instruments has announced it will upgrade its GaN-on-Si process from 6-inch wafers to 8-inch wafers to increase productivity and lower prices… Läs mer om "Texas Instruments Upgrades GaN-on-Si Process

SiC substrates are widely utilized in electric vehicle power devices to maximize their efficiency and reliability, helping reduce energy loss, shorten charging times, save space… Läs mer om "Silicon Carbide Substrates for Power Devices