SCT055HU65G3AG is an advanced silicon carbide (SiC) MOSFET that provides faster switching, lowers losses, and improves thermal management in electrical equipment for electric vehicles and fast chargers. With low on-resistance over temperature and capacitance enabling compact designs that are energy efficient while its higher voltage rating allowing more power through more passive components at once.
Fast switching
The SCT055HU65G3AG from ST’s third-generation silicon carbide (SiC) MOSFET family provides high switching capability, low losses and enhanced thermal management in automotive and industrial power systems. Boasting low on resistance over temperature and small gate charge fees compared to silicon MOSFETs, its increased system efficiency leads to decreased energy consumption, system size and weight compared to prior silicon versions. Available in various packages with convenient cooling tabs for connection to baseplates or heat sinks makes it ideally suited for rapid chargers for electric vehicle batteries while supporting bidirectional power flow for bidirectional power transfer directly between batteries and grid electricity supplies – ideal for electric vehicle rapid chargers!
Low on-resistance
SCT055HU65G3AG SiC FET’s ultra-low on resistance allows designers to achieve higher power density, reduced system weight, and lowered total costs compared to silicon MOSFETs, due primarily to a lower figure-of-merit for RDS(on)max / gate charge (Qg). This also facilitates high efficiency switched mode power supplies (SMPSs) as well as energy loss reduction in automotive onboard chargers or rapid charging infrastructures.
STMicroelectronics’ SiC power MOSFETs deliver up to 800A current saturation at Tj,start=25degC while offering low on-resistance and capacitance; making them suitable for electric vehicle on-board chargers and rapid chargers. Their higher voltage rating than silicon counterparts allows them to be used across a wider temperature range and supports bi-directional power flow – essential components in on-board chargers that transport electricity from battery back onto grid power grid.
Low capacitance
ST’s third-generation SiC MOSFET features low on-resistance across its entire temperature range and capacitance, helping power system designers increase energy efficiency while decreasing system size and weight. Furthermore, this MOSFET supports bidirectional power flow – essential for fast charging applications like electric vehicle fast charging.
The May infringement contentions do not introduce new products or claims into the case and do not expand on specific measurements plaintiffs intend to take. Furthermore, no legal theories such as inducement or contributory infringement have been included within them.
Example: TK7S10N1Z GaN FETs have lower capacitance compared to similar products; however, their high transconductance requires a larger die, leading to increased parasitic capacitance and parasitic capacitance. Therefore, it is crucial that before choosing any part it is important to review its gm vs ID plot for accuracy.
High voltage rating
The capabilities of the 650 V device allow power system designers to achieve higher energy efficiency with smaller passive components than with traditional silicon MOSFETs. By offering low on-resistance over temperature range, low capacitance, fast switching and small heat sinks, smaller heat sinks can be used to reduce system size and weight. Furthermore, its fast intrinsic diode supports bidirectional power flow – an essential feature in automotive onboard chargers and rapid chargers.
Purdue’s May infringement contentions do not introduce any new products or claims into this case, but instead include new charts of “representative products”, including SCT055HU65G3AG and Tesla Drive Inverter which use an ST SRFL die. These charts do not add inducement or contributory infringement claims and they do not propose any novel legal theories of infringement.
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