Catania SiC Campus is the first integrated fab to mass produce 150mm SiC epitaxial substrates using all steps of production flow; 200-mm wafers will follow shortly thereafter. It supports ST’s vertical integration strategy in wide bandgap power devices for automotive, industrial and energy applications.
Poshun Chiu, Senior Technology & Market Analyst of Yole Group and Milan Rosina, Principal Analyst Power Electronics and Battery at Yole Group discuss recent advancements.
Power Devices
Electric vehicles (EV) and hybrid-electric vehicles (HEV) represent an attractive target market for power semiconductors in automotive applications. Last year, Tesla became the first carmaker to employ third-generation STPOWER SiC MOSFET devices in its Model 3 main inverter.
SiC devices boast higher efficiency and temperature resistance compared to silicon-based alternatives, reducing energy losses in power systems. Furthermore, their lower on-state resistance enables smaller form factor solutions as well as reduced cooling requirements – ultimately increasing vehicle reliability.
STMicroelectronics recently signed a multi-year supply agreement with Geely Auto Group to deliver its SiC power devices, designed specifically to boost performance while speeding charging times and expanding driving range. Based in Geneva, STMicroelectronics will supply these cutting-edge SiC devices that will be utilized across their multiple brands of mid- to high-end all-electric vehicles for better performance, faster charging and extended driving range.
Next-generation devices from the company will be offered in both 750V and 1200V classes, with 1200V devices expected to be certified early in 2025. Both will come housed in HiP247 packages featuring high junction temperature ratings for superior switching performance with reduced losses for more energy-efficient systems. Furthermore, they have one of the lowest forward voltage drops on the market reducing energy dissipation while improving power conversion efficiency.
Fordon
STM produces chips for automotive, energy and industrial uses as well as personal electronics like sensors. Their customer list includes Apple, Google, SpaceX, Tesla, BYD Stellantis BMW Airbus as well as numerous car, truck, EV aircraft power generation and charging companies.
STMicro recently unveiled its third generation of “STpower” SiC MOSFETs for electric vehicle (EV) and fast-charging infrastructure applications requiring high levels of energy efficiency and power density. These advanced power devices boast lower on-resistance than previous generations to reduce conduction losses and maximize system efficiency; additionally they boast superior switching performance in dynamic reverse bias conditions exceeding AQG324 automotive standard requirements, guaranteeing high levels of reliability.
These new 650V and 1200V devices boast the industry’s lowest forward voltage drops, significantly decreasing energy dissipation as heat. Furthermore, they come packaged in an innovative low-profile HiP247 package to maximize PCB form factor and facilitate thermal management.
STMicro has entered into an exclusive long-term supply agreement with Geely to supply their silicon carbide power devices for their all-electric vehicles, in order to improve vehicle performance, accelerate charging speeds and extend range. STMicro will focus on offering solutions ranging from current sensing shunt devices up to high voltage MOSFETs at both 650V and 1200V levels – as well as supporting them all with intuitive design tools such as the eDesignSuite design tools.
Industrial
Silicon carbide (SiC) devices offer significant advantages over silicon devices in terms of breakdown voltage, operating temperature and switching speed compared to their silicon counterparts – making them the perfect choice for applications such as electrical mobility and increased efficiency. ST offers SiC MOSFETs and power Schottky diodes designed to meet these demanding standards in applications including inverters for electric vehicles (EV), solar inverters, industrial motor drives and energy storage applications.
STMicroelectronics announced its major investment to build an SiC campus in Catania that includes a high-volume 200mm manufacturing plant for power devices and modules as well as test and packaging services, supplemented with their existing production hub for SiC substrate production. Together with their existing facility for SiC substrate fabrication, this will form a complete production hub for SiC technology that significantly accelerates development and adoption of this groundbreaking technology.
This integrated manufacturing site will facilitate full vertical integration from SiC epitaxial substrate fabrication through production of SiC power devices and modules, advanced packaging, and testing. This approach ensures cost savings while providing quality assurance with tight feedback loops linking material defects with device performance and quick responses to any supply chain disruptions that threaten product delivery or consumer reliability. Moreover, local talent and economic self-sufficiency is fostered by developing skills training and community involvement.
Energy
STMicroelectronics’ engineers are harnessing the energy-saving potential of silicon carbide (SiC) with their third generation STPOWER SiC metal oxide semiconductor field effect transistors (MOSFETs). Designed specifically to operate at higher voltages than existing 800-volt systems, these MOSFETs allow higher charging speeds, reduced weight and longer travel distances for drivers.
At 18 V, this device’s RDS(on) x A performance matches that of Wolfspeed planar MOSFETs while exceeding ON Semiconductor’s NTH4L015N065SC1 with 2.51 mO*cm2, boasting lower gate array pitch and dopant distribution optimization tailored specifically to the drift region. Furthermore, its ultra-low junction capacitance facilitates fast switching operations resulting in reduced switching losses and shorter delay times, all while offering increased temperature resistance, reliability, and energy efficiency.
Poshun Chiu, Senior Technology & Market Analyst of Compound Semiconductors & Emerging Substrates at Yole Group and Milan Rosina, Principal Analyst for Power Electronics & Battery both work at Yole. Both recently discussed SiC technology with Riccardo Nicoloso from STMicroelectronics’ New Materials & Power Solutions Division General Manager Riccardo Nicoloso to share an update.
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