STMicroelectronics introduces its fourth generation of silicon carbide MOSFET devices designed specifically to address electric bus traction inverters, improving energy efficiency, power density and reliability.
This comprehensive SiC MOSFET Discretes Performance Analysis 2024 Vol 1 report examines in detail the static performance of five discrete SiC MOSFETs from various global manufacturers rated 1200V-class under identical test conditions, as well as one reference Si IGBT device from various worldwide vendors.
Wide bandgap materials
As engineers continue to extract diminishing returns from silicon ICs, they are turning towards wide bandgap materials like gallium nitride and silicon carbide for next-generation power electronics development. These materials feature larger energy gaps than traditional semiconductors which allows them to function at higher temperatures while offering improved power conversion performance in power conversion applications.
Wide-bandgap (WBG) semiconductors feature an electronic bandgap that exceeds two electronvolts (eV), enabling them to operate at much higher temperatures than conventional semiconductors and providing superior electrical characteristics than silicon for use in power electronic applications.
WBG semiconductors include group IV, III-V and II-VI material families like SiC and GaN. Ultra-wide bandgap (UWBG) semiconductors offer even larger bandgaps of up to 4 eV, such as diamond and III-nitrides with alkali elements like BN or AlGaN.
STMicroelectronics is currently developing several generations of SiC MOSFETs designed for automotive-grade applications, such as inverters and fast-charging EV infrastructure. Their third-generation devices feature a planar structure which delivers outstanding on-resistance at high temperature with RDS(on) reduction compared to existing technologies; their switching frequency can reach 10 times that of conventional silicon transistors; plus they come packaged in industrial packaging to enable effective thermal management. Eventually they’ll launch their STpower SiC MOSFET portfolio which will include packages like HiP247; H2PAK-7; TO-247 long leads; STPAK;
Low on-resistance (RDS(on))
RDS(on) of MOSFETs is an essential parameter that determines their ability to conduct current. RDS(on) also affects efficiency; lower RDS(on) reduces power loss, improving overall circuit performance and reliability; engineers strive to minimize RDS(on). When designing power supplies or electronic devices, engineers look for ways to minimize RDS(on).
MOSFETs made with wide bandgap materials have lower resistance dissipation sources (RDS(on), increasing efficiency and speed during switching operations, as well as being more resilient in dynamic reverse bias conditions – particularly useful for power electronics applications. Furthermore, these new MOSFETs can withstand large voltage swings without overheating, potentially leading to system failure and device damage.
ST’s advanced silicon carbide power devices feature innovative wide bandgap materials that provide optimal performance with reduced on resistance per area (RDS(on)), making for smaller and more energy efficient systems. Our devices come in state-of-the-art packages such as HiP247, H2PAK-7, TO-247 long leads and STPAK.
RDS(on) in power electronics MOSFETs converts current into heat, so selecting one with a low RDS(on) value is critical for effective thermal management. However, understanding what factors affect RDS(on) values is also vital as many myths about it exist and can lead to costly mistakes in design decisions. A better understanding of RDS(on) may help engineers avoid mistakes when designing circuits.
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SiC MOSFETs require fast switching speeds in order to transfer energy efficiently between cycles, leading to better efficiency and shorter circuit length. This factor becomes especially relevant in electric vehicle (EV) applications where power demands exceed those found in traditional automotive applications.
STMicroelectronics’ third-generation SiC MOSFETs boast higher switching speeds than their second-generation counterparts and are ideal for use in electric motor drives and renewable energy applications, including those involving electric vehicle motor drives and renewable energies. Their advantages over silicon solutions include higher efficiency, smaller components, reduced weight and extended driving range compared to silicon solutions; additionally their RDS(on) ratio lower than IGBTs allows them to save space and reduce per unit costs in power supplies.
These new MOSFETs utilize a double-trench design and boast reduced reverse leakage current (IR). Their gate-source capacitance Cgd and gate-drain charge Qgd have also been improved significantly; RDS(on)/Ron,sp has been reduced by 40% compared to comparable planar designs; furthermore their on-state resistance has been significantly decreased through reduced gate array pitch and dopant optimization of their drift region doping strategy.
These features make these devices perfect for applications involving electric vehicles (EVs) and fast charging infrastructure, where power density, energy efficiency and reliability are of utmost importance. These devices can be found in inverters, AC/DC converters and rectifification. Manufacturers using them to meet EPA2022 and CARB2025 compliance can use them to supplement solar inverters and energy storage systems.
Low capacitance
SiC MOSFETs are widely utilized in power conversion devices like converters, inverters and high-efficiency motor drives. Due to their higher efficiency, reduced weight and power loss compared with silicon devices, discrete SiC MOSFETs can offer significant cost savings and operational reliability benefits to customers while decreasing energy consumption and environmental impacts in industrial settings by decreasing power loss while increasing efficiency.
ST has developed state-of-the-art packages for their first and next-generation SiC power devices, such as HiP247, H2PAK-7 and HU3PAK discrete devices for automotive and industrial applications. All of these packages provide driver source pins to optimize switching performance of these discrete devices while their copper ribbon bonding facilitates easy mounting and automated production processes.
Yole Group, a top market, technology, and reverse engineering firm focused on compound semiconductors, recently collaborated with SERMA Technologies to publish SiC MOSFET Discretes Performance Comparison Analysis 2024 Vol 1. The report analyzes static performance comparison of five discrete SiC MOSFETs of 1200V class (Wolfspeed C3M0075120D, ROHM SCT040H65G3AG, Infineon AIMW120R080M1, and STMicroelectronics SCTW40N120G2VAG) along with Infineon’s reference IGBT device.
ST has successfully qualified its 750V class SiC power MOSFET, and anticipates completing qualification of its 1200V-class device by early 2025. Both of these MOSFETs can be found in electric vehicle (EV) traction inverters as well as other high-voltage power electronics applications with AC line voltages up to and exceeding 1000V.
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