Clas Sic Wafer Fab is the world’s first open foundry dedicated exclusively to producing silicon carbide power semiconductors. Established in June 2017, this pioneering open foundry offers rapid process R&D and quick time-to-market with capabilities spanning device development, sampling and medium volume production up to 150mm diameter wafers.
With their limited site footprint, the fabrication team turned to T-SQUARED for full design and construction expertise that would ensure they could create a robust design that maximized their investment value.
Founded in 2017
At Class Sic team members are awarded with shares as soon as the business achieves significant market success, providing all with a sense of ownership and motivation to ensure its survival. Employee ownership also encourages sharing innovative ideas among colleagues while producing the highest quality work products possible.
Since its establishment, Clas SiC has quickly grown into one of the leading power Silicon Carbide (SiC) wafer fab companies worldwide. Along with this impressive success have come ambitious expansion plans both in terms of capacity and technology portfolio.
Power SiC devices are in high demand globally due to international efforts towards Net Zero energy use and electrifying transportation, and power SiC devices play a critical role in high efficiency power conversion applications such as these.
Yole’s recent report indicates that SiC power device adoption is increasing quickly this year; however, the supply chain must be prepared for this surge – particularly at epiwafer level, where many players have struggled to increase production capacity.
Headquartered in Lochgelly, Scotland
Clas SiC WaferFab is the UK’s only end to end power silicon carbide (SiC) wafer foundry, providing customers with access to their entire silicon carbide (SiC) wafer development and production needs with comprehensive services including device design, sample fabrication and medium volume production on 150mm wafers. Customers are able to expedite process research & development (R&D), fast time-to-market development of devices they are designing as well as device support packages including device fabrication samples.
Company headquarters can be found in Lochgelly, Fife; offering world-class engineering talent and skilled workers as well as superior facilities to support semiconductor production.
Jen Walls, CEO of Clas SiC, boasts an extensive background in wide band gap semiconductors. She began her career at Raytheon as part of their defence division where she quickly advanced. However, Jen had always desired for their silicon carbide (SiC) division to become an independent entity.
From its launch with $50 million of private investor funding in 2017 until today, Clas Sic has seen rapid growth in customer demand due to global efforts toward net zero emissions and electrification of transport. Consequently, it has expanded both its capacity and technology portfolio by adding higher voltage power SiC diodes and MOSFETs, along with state-of-the-art facilities & tooling dedicated specifically for SiC technology.
Manufacturing 150mm Semiconductor Wafers
UnitedSiC suggests that any company interested in producing SiC power devices requires a facility capable of processing between 10,000 to 30,000 wafers a month for processing purposes, as the cost of SiC may increase the price of power-producing circuits that use it.
SiC power semiconductors convert battery power into torque for increased vehicle performance and range, leading to greater vehicle range and performance. Their superior energy efficiency and reliability over silicon-based devices makes them highly sought-after devices.
Manufacturers looking to produce power SiC chips must first acquire high-grade SiC substrates before beginning processing steps to assemble their device – doping being one such important step, which adds impurities into SiC to alter its electrical properties and lower resistivity.
Dopants must be placed with precision and minimal damage to the crystal lattice during this process, which is no simple feat given its hardness and density of substrate material. To help facilitate this task, Applied Materials developed its VIISta 900 3D hot ion implant system enabling fabrication of high-quality SiC substrates.
This new tool aims to enhance yield and power efficiency by creating a more uniform and compact SiC structure, as well as by eliminating defects or voids that impede performance. Furthermore, the CS200 platform tools offer lower ownership costs than conventional CMP equipment used for silicon or compound semiconductors.
Partnering with Customers
Silicon carbide (SiC) power semiconductors have become increasingly popular due to their superior performance and lower costs when compared with silicon power semiconductors. As demand for SiC increases, chipmakers must ensure sufficient wafer supply – some have built their own fabrication facilities while others partner with foundries that can supply their needed wafers; but now an emerging model allows fabless companies to enter the market as well.
An IDM may find a foundry model useful when entering the SiC market for the first time; however, for established IDMs this is not ideal as their operations and design must all take place under one roof – eliminating third party involvement as much as possible.
Clas Sic Wafer Fab allows the company to provide customers with high quality products at a more reasonable cost, thanks to an experienced manufacturing team committed to continuous improvement. They work closely with suppliers on developing new technologies and production processes as well as working closely on developing them themselves.
ST’s Clas SiC Wafer Fab will allow them to produce high-volume STPOWER SiC products more cost effectively and in greater volume, according to customer commitments estimated at EUR5 billion across automotive and industrial applications. It’s expected to go live by 2024 as it becomes one of the world’s largest 200mm SiC power Fabs.
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