Wolfspeed recently made an unprecedented investment in an advanced silicon carbide fabrication facility that will enable them to meet any potential future demand surges as well as remain an industry leader for SiC devices.
Wolfspeed power devices manufactured using silicon carbide have amassed more than 6 trillion field hours over decades of operation, giving a comprehensive picture of long-term reliability.
Reliability
Electricity powers our world – and Wolfspeed Silicon Carbide wide bandgap semiconductors deliver that energy more efficiently than any other material on earth. Their Schottky diodes, MOSFETs and power modules are among the lightest, smallest and most powerful available and outperform conventional silicon components in applications for aerospace, automotive, industrial, renewable energy generation systems testing measurement services and test and measurement.
For example, their 2300 V BM3 device family features a single-die MOSFET that eliminates the need for an external body diode, saving costs and complexity. Furthermore, this device offers 15% higher voltage headroom than IGBTs with 77% reduced switching losses allowing for smaller power conversion systems.
With integrated sense and protection functions, this device provides level-1 reflex action to safeguard itself and the system when under stress. Thanks to Wolfspeed’s vertically integrated manufacturing flow – from growing SiC boules to packaging die – extrinsic defects have been reduced significantly, leading to devices with lifetime prediction models comparable to or surpassing industry standards.
These advantages enable designers to incorporate silicon carbide devices into almost any industrial power design, providing designers with an easy upgrade path towards sustainability goals. Utilizing silicon carbide devices can increase UPS efficiencies by 30-35% and reduce power losses in rail traction systems by 50-75%; and they can pack more backup power into smaller and lighter systems for space-constrained environments. Furthermore, their products reduce emissions and energy use allowing customers to reach their sustainability objectives more easily.
Efficiency
Electricity keeps our world running, and Wolfspeed Silicon Carbide wide bandgap semiconductors surpass conventional silicon components to set new efficiency standards in motors, switch-mode power supplies (SMPSs) and other applications. These lightweight yet highly efficient devices form the basis of many innovative designs that satisfy size/weight restrictions without incurring unworkable compromises.
One 22kW DC-dc converter design employs a Gen 3 SiC MOSFET with an intrinsic body diode to eliminate the need for separate gate drive, further reducing total bill of materials and board size. Furthermore, this particular converter utilizes variable DC-link voltage control mode which reduces switching frequency while operating closer to its resonant point for reduced CLLC ripple.
Wolfspeed provides discrete and power modules that are customizable in terms of topologies, BOM costs and physical size/layout for power design systems such as buck/boost DC/DC converters and high-frequency AC/DC. Modeling these designs with LTspice allows designers to begin optimizing designs immediately.
Wolfspeed’s latest 900 V SiC power MOSFET with an ohmic body diode and drain-source structure achieves 97% efficiency compared to 85% for equivalent Si devices, leading to significant cost savings on BOM components and overall system costs.
Scalability
As energy demands in energy-hungry industries increase, designers are turning to wide bandgap silicon carbide (SiC) technology to increase system efficiency. By minimizing switching losses, SiC devices allow smaller, lighter motors, drives, inverters and power electronics systems with better efficiency – helping lower operating costs while decreasing system footprint.
SiC modules provide a scalable platform that can adapt to small to large systems. Their 2300 V capacity makes combining these modules easy, while their use also enables manufacturers to quickly scale designs quickly and affordably. Furthermore, system engineers can utilize less expensive PCBs that help bring down manufacturing costs overall.
Wolfspeed, as an industry leader in power semiconductors, is deeply committed to creating a more sustainable global supply chain and protecting our environment. To this end, it has implemented various green initiatives across its office buildings and semiconductor manufacturing processes, in order to minimize environmental impact. Furthermore, it received Silver LEED certification for its New York City headquarters while it strives towards certification at Siler City facility; additionally it established a recyclability program at all its facilities that has enabled savings of over $1 Million on landfill fees since inception.
Cost
Wolfspeed holds an unrivaled position as the pioneer and market leader of silicon carbide (SiC) semiconductor substrates, power devices and design tools that enable designers to choose the appropriate device for their designs. Our extensive portfolio includes silicon carbide power devices for optimizing BOM costs and physical size/layout optimization as well as tools that simulate topologies to find out which device fits their design best.
SiC MOSFETs boast much higher efficiency than silicon in two-level topologies, reducing single points of failure in high voltage power electronics modules and making SiC an excellent choice for renewable energy, solar PV and battery storage applications.
The company boasts an expansive design-in pipeline, which will drive revenue growth. Furthermore, they have inked a long-term supply agreement with a major global chipmaker for 150mm SiC bare and epitaxial wafers – this reinforces both companies’ visions for transitioning away from silicon power semiconductors towards SiC power semiconductors.
Wolfspeed also operates a new 200mm SiC power fab in Mohawk Valley, New York which has been underutilised during its ramp up phase; they anticipate reaching 20% utilization by 2024.
The company is in a high investment phase and will spend $2 billion this year on its fabs. Plans include opening an additional RF GaN facility in Saarland, Germany; as well as silica crystal growing and wafer fabrication facilities at Siler City in North Carolina. They are working with career programs such as Real Life Rosies and VET STEP to attract more women and veterans into the semiconductor workforce.
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