ROHM Semiconductor’s 4th generation SiC MOSFET bare chips and modules, which significantly decrease energy loss for electric drive systems, will be showcased at PCIM 2024 as part of their effort to extend cruising range and minimize battery size.
Rohm Gen 3 SiC SBDs feature an innovative two-dimensional lattice of gates arranged top-to-bottom and left-to-right that doubles gate density for the same footprint, significantly improving rise voltage compared to conventional FRDs while offering excellent temperature performance. This design significantly increases gate density per footprint and is an impressive example of high design excellence.
Industry-Leading Low ON Resistance
Silicon Carbide (SiC) semiconductor devices have garnered significant attention from power semiconductor companies due to their superior efficiency, temperature tolerance, frequency response, and voltage output performance compared to traditional silicon devices. This can translate to improved energy savings in various applications while helping mitigate carbon dioxide emissions, energy consumption and global warming through energy conservation measures.
As more next-generation electric vehicles (xEVs) enter the market, demands have arisen for electrical systems to become smaller in size and weight; particularly the main drive inverter which plays such an essential role. But to meet performance targets while simultaneously decreasing size and weight requires further technological developments in power devices.
ROHM’s 4th Generation SiC MOSFET boasts industry-leading ON resistance of 2.1m in an HSOP8/HSMT8 package and lower element gate capacitance Qgd for reduced switching losses. Furthermore, its 15V gate-source voltage offers more flexible power stage circuit designs than conventional products which require 18V as a gate source voltage requirement.
DigiKey(tm), Mouser(tm), and Farnell(tm) offer ROHM’s 4th Generation SiC MOSFETs and ICs in various packages for demonstration at PCIM Europe 2024 trade fair. In addition, EcoGaN family of GaN HEMTs will also be on display.
Improved Short-Circuit Robustness
As SiC is more reliable than silicon (Si) power semiconductors, its short-circuit robustness becomes an important criterion when choosing SiC devices for high-power applications. ROHM’s Gen 4 SiC MOSFETs boast significantly reduced ON resistance and switching performance without compromising their reliability under extreme operating conditions – including short circuit tests (SC).
Gen 4 MOSFETs utilize a new trench structure which reduces drain-source resistance by up to 50% when compared with conventional planar type SiC devices, thanks to inserting dummy trenches between gate and source trenches to disperse electric field and reduce temperature-dependence of Schottky barrier height. This results in lower ON resistance, higher switching frequencies with lower losses, and decreased input capacitance.
MOSFETs from MOSIS also boast an advanced cell layout and thinner substrate to reduce parasitic effects, leading to lower ON resistance per device area with an equivalent rise voltage of less than 1V compared to traditional Si FRDs and significantly enhanced recovery characteristics after reverse biasing.
In a safe short circuit test, this dramatically increases the critical energy EC. A recent test in our Power lab in Willich/Germany using Semikron’s eMPack power module and our Gate driver BM6112 (20A output DESAT detection and advanced soft turn off) enabled an SC time of under 2us while an overvoltage peak of less than 60V could be achieved.
Optimized for EV Power Systems
As the development of electric vehicles (EVs) accelerates, demand for power devices with increased voltage withstand has surged. ROHM’s 4th Generation SiC MOSFETs deliver higher performance with lower losses for more energy-efficient systems allowing smaller designs.
ROHM is leading the market introduction of these devices by offering discrete components and modules optimized to support higher battery voltages and faster charging, ultimately contributing to longer cruising ranges. ROHM also provides bare chips and discrete components optimized for use in power supply sections of electric vehicle chargers, UPS units and PV inverters.
ROHM also introduced the TRCDRIVE pack, a molded type module for traction inverter drive applications designed to maximize heat dissipation area and significantly reduce size, power consumption and increase efficiency by up to 50%. Furthermore, these modules feature control signal terminals compatible with push-fit pins enabling connections by simply pushing down on the gate driver board from above – significantly cutting installation time and installation time!
ROHM and UAES have joined forces to increase the spread of Power SiC. Together they are developing SiC modules specifically tailored for automotive applications like onboard chargers and inverters for electric vehicles (EVs). Their long-term partnership ensures UAES access to ROHM’s devices enabling technological development as well as rapid deployment of cutting-edge EV power systems.
EcoSiC Brand
ROHM’s ‘Power Eco Family’ branding concept strives to maximise efficiency and compactness of electronic applications while making an environmental contribution. ROHM will use EcoSiC as part of this initiative by marketing power semiconductor devices made from silicon carbide (SiC), an energy-saving material used in high-performance applications like electric vehicles and renewable energy systems.
EcoSiC’s SiC devices enable higher switching frequencies with lower losses compared to other semiconductor materials, significantly decreasing power consumption while improving energy efficiency and compactness. Their logo incorporates circuit patterns and hexagonal crystal structures representing technological innovation and precision.
ROHM will introduce the EcoSiC brand as part of their expanding product offering featuring gallium nitride power devices renowned for their superior properties such as fast switching speed. The EcoGaN logo has been in use since 2022. The combination will strengthen their product offering.
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