Silicon Carbide (SiC) chips offer higher voltage, temperature and frequency performance than their silicon semiconductor counterparts, making them suitable for electric vehicles (EVs), solar power conversion applications, 5G wireless communications networks and aerospace use cases.
ON Semiconductor appears well positioned to take advantage of this shift, according to Mizuho Securities analyst Vijay Rakesh who rates ON stock as overweight with a $100 price target.
Why onsemi?
Silicon carbide boasts a much wider band-gap than silicon, enabling it to operate at higher frequencies and voltages with greater thermal conductivity – helping devices running in SiC environments run cooler for longer and improve performance in high-temperature applications.
Onsemi stands out in the power semiconductor industry by being one of the few manufacturers capable of developing EliteSiC products from crystal growth all the way through final packaging. This vertical integration enables onsemi to maintain consistent process control, rigorous wafer and device qualification standards and an uninterrupted supply chain.
Onsemi’s revolutionary SiC technology is revolutionising AI data center designs, industrial motor drives and automotive power systems – such as AI datacenters. Register for Onsemi’s webinar about their groundbreaking PowerTrench T10 series of mid-voltage SiC MOSFETs – providing efficiency, reliability and performance essential for driving forward next-generation power designs.
EliteSiC MOSFETs
Onsemi’s EliteSiC portfolio of energy-efficient Silicon Carbide (SiC) power semiconductor devices is revolutionizing power system design. SiC’s advanced material properties enable more energy-efficient and compact power systems for applications such as electric vehicle chargers and uninterruptible power supplies. For further insight into SiC’s impactful transformation on power electronics, Mouser Electronics and Onsemi have collaborated to produce an ebook entitled Enabling a Sustainable Future with SiC Power Electronics.
SiC MOSFETs’ robustness enables simpler topologies with fewer switches. Furthermore, their higher frequency operation than superjunction MOSFETs or IGBTs to achieve the same power density allows them to operate with smaller magnetic and capacitive components and smaller heat sinks than their counterparts – further reducing losses and power consumption in power designs.
Onsemi’s automotive-grade 1200 V EliteSiC M3e MOSFETs can reduce turn-off losses by as much as 50 percent, substantially improving efficiency in traction inverters by allowing up to 20% more power delivery from a similar system volume. They also boast one of the lowest specific on resistances and short circuit capacities on the market – making them suitable for high speed switching applications.
EliteSiC Power Modules
The EliteSiC portfolio comprises energy efficient silicon carbide (SiC) diodes, MOSFETs and modules as well as gate drivers. These devices use cutting-edge SiC technology that boasts superior switching performance with greater reliability than silicon-based components – reducing system size, weight and cost while being fast and rugged enough for use in industrial settings.
This portfolio offers a full selection of silicon carbide power switches with industry-leading low Rds(on). They come in an F2 package designed to withstand industrial applications. Also featured is half-bridge SiC power integrated modules (PIMs), designed specifically for DC-AC, AC-DC and DC-DC high power conversion stages such as in EV DC fast charging applications or solar inverters as well as uninterruptible power supplies.
These modules focus on thermal management to prevent overheating and increase reliability, with lower energy losses to cut power conversion costs. A variety of intelligent power technologies such as gate drivers, DC-DC converters and e-fuses is also offered for seamless integration, further lowering total system cost.
EliteSiC Evaluation Kits
Onsemi offers a range of tools and kits to assist your project, whether you are designing from scratch or updating existing applications. Our user-friendly Web Designer+ power supply design tool provides instantaneous verification of hundreds of possible solutions tailored specifically for you and your unique requirements.
Rapid expansion in electric vehicles (EVs), renewable energy and green technology is creating unprecedented demand for silicon carbide (SiC) power devices, surpassing current supply capacities. Here are three compelling arguments why you should source your SiC from an industry-first vertically integrated supplier who offers end to end supply chain management that ensures uninterrupted parts availability.
EliteSiC MOSFETs deliver up to 20% lower power losses compared to industry leading competition in hard switching applications, when used together with one of our 1700 V avalanche-rated EliteSiC Schottky diodes for high voltage operation at elevated temperatures while providing the high efficiency provided by SiC.
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Silicon carbide (SiC) is an innovative semiconducting material composed of silicon and carbon atoms arranged into crystals that boast superior efficiency and performance compared to traditional semiconductors. SiC technology has become integral in electric vehicles as well as carbon-friendly energy infrastructure development projects.
SiC devices are revolutionizing power conversion for electric vehicle traction inverters, renewable energy systems and charging infrastructure. Their high power/high efficiency devices play a critical role in lowering costs associated with electric vehicles while making energy storage more cost effective – thus encouraging the adoption of greener transportation options.
Onsemi recently completed its world’s largest, state-of-the-art SiC fabrication facility in Bucheon, South Korea. Capable of producing more than one million 200mm SiC wafers annually, this capacity will enable Onsemi’s EliteSiC power MOSFETs and modules which increase efficiency in electric vehicle (EV) drive trains, infrastructure and charging applications to meet growing customer demand.
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